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“Navitas’ next-generation power semiconductors bring enormous value to VREMT’s design teams,” said Mr. The Design Center assists customers to maximize GaN and SiC performance advantages, including high-frequency magnetics design plus advanced packaging and modules to create higher power density, higher efficiency, and lower system cost power electronics systems for EVs.

The joint R&D lab will be further supported by Navitas’ own unique EV System Design Center, located in Shanghai. The lab will host highly skilled Navitas engineers, working with advanced power system design tools and in close partnership with VREMT system design teams. Charles (Yingjie) ZHA, VP and GM of Navitas China opened the joint lab in Ningbo, PRC on November 1 st, 2022. Shuibao GUO (郭水保), Vice GM of VREMT and Mr. These advances will enable EV power conversion systems to deliver faster-charging, faster-acceleration, longer-range and lower-cost EVs which will accelerate our planet’s transition from fossil-fuel to clean-air vehicles. GaN and SiC are ‘wide bandgap’ power semiconductors that deliver higher efficiency at faster switching speeds, with smaller system size and lower costs than legacy silicon chips. Torrance, CA – November 3rd, 2022- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, and VREMT, industry-leading electric powertrain supplier to ZEEKR, Volvo, Polestar and Lotus, announced the opening of an advanced, joint R&D power semiconductor laboratory to accelerate EV power-system developments using Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes. New lab accelerates development of advanced EV high-voltage applications using Navitas’ GaNFast™ and GeneSiC™ power semiconductors

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